Controlling charge doping in 2D materials

Tech ID: T-019602

Technology Description

Researchers at Washington University in St. Louis have developed a method to control charge doping in 2D materials like graphene. This method uses α-RuCl3 to create pn junctions at a smaller scale than silicon transistors.

While α-RuCl3 efficiently removes electrons from graphene to create a charge-doped region, the effect can be mitigated by introducing layers of hexagonal boron nitride (hBN) between the two materials. This allows the charge doping to be precisely controlled and spatially-defined.

Stage of Research

The researchers have constructed and extensively tested prototype devices using monolayer graphene, WSe2 and EuS.



  • Construction of transistors from 2D materials (van der Waals heterostructures)

Key Advantages

  • Allows creation of transistors smaller than Si-based
  • Applicable to multiple 2D materials: graphene, WSe2, EuS, etc.

Patents: Pending

Related Web Links: Henriksen Profile & Lab

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